Modeling SiH4 /O2 /Ar Inductively Coupled Plasmas Used for Filling of Microtrenches in Shallow Trench Isolation (STI)
Author:
Publisher
Wiley
Subject
Polymers and Plastics,Condensed Matter Physics
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/ppap.201100093/fullpdf
Reference50 articles.
1. Advanced HDP STI Gap-Fill Development in 65nm Logic Device
2. Gap-Fill Process of Shallow Trench Isolation for 0.13 µm Technologies
3. Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD
4. Low temperature silicon dioxide film deposition by remote plasma enhanced chemical vapor deposition: growth mechanism
5. Chemical modeling of a high-density inductively-coupled plasma reactor containing silane
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