SiCN:H thin films deposited by MW‐PECVD with liquid organosilicon precursor: Gas ratio influence versus properties of the deposits-Reference-Cited by-同舟云学术

SiCN:H thin films deposited by MW‐PECVD with liquid organosilicon precursor: Gas ratio influence versus properties of the deposits

Published:2019-11-04 Issue:1 Volume:17 Page:1900138
ISSN:1612-8850
Container-title:Plasma Processes and Polymers
language:en
Short-container-title:Plasma Process Polym

Author:

Plujat Béatrice¹^ORCID,Glénat Hervé²,Bousquet Angélique³,Frézet Lawrence³,Hamon Jonathan⁴,Goullet Antoine⁴,Tomasella Éric³,Hernandez Emmanuel¹,Quoizola Sébastien¹,Thomas Laurent¹

Affiliation:

1. Université de Perpignan Via DomitiaPerpignan France

2. Laboratoire PROMES CNRSPerpignan France

3. Université Clermont AuvergneAubière France

4. Institut des Matériaux Jean RouxelNantes France

Funder

Agence Nationale de la Recherche

Publisher

Wiley

Subject

Polymers and Plastics,Condensed Matter Physics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/ppap.201900138

Reference54 articles.

1. Selective effect of ion/surface interaction in low frequency PACVD of SIC:H films: Part B. Microstructural study

2. Comparison between single and multilayered a-SiC:H coatings prepared by multi-frequency PACVD: Mechanical properties

3. Corrosion and tribo-corrosion behavior of a-SiCx:H, a-SiNx:H and a-SiCxNy:H coatings on SS301 substrate

4. Structural, mechanical, tribological, and corrosion properties of a-SiC:H coatings prepared by PECVD

5. Effect of thermal annealing on the structural and mechanical properties of amorphous silicon carbide films prepared by polymer-source chemical vapor deposition

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