GaN HEMT-based hybrid current-mode class-S power amplifier for 955 MHz LTE signal-Reference-Cited by-同舟云学术

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GaN HEMT-based hybrid current-mode class-S power amplifier for 955 MHz LTE signal

Published:2014-06-24 Issue:9 Volume:56 Page:2118-2121
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Park Jun-Chul¹²,Yook Jong-Gwan²,Park Bong Hyuk³,Yoo Chan-Sei¹,Kim Dongsu¹,Lee Woo Sung¹

Affiliation:

1. Electric Materials and Device Research Center; Korea Electronics Technology Institute (KETI); Sungnam-si Gyeonggi-do Korea

2. Department of Electrical and Electronics Engineering; Yonsei University; Seoul Korea

3. Department of B4G Mobile Communications Research; Electronics and Telecommunications Research Institute; Daejeon Korea

Funder

IT R&D program of MKE/KEIT

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/mop.28541/fullpdf

Reference11 articles.

1. Linear high-efficiency microwave power amplifiers using band-pass delta-sigma modulators;Jayaraman;IEEE Microwave Guides Wave Lett,1998

2. W.Y. Kim J. Rode A. Scuderi H.S. Son C.S. Park P. Asbeck An efficient voltage-mode class-D power amplifier for digital transmitters with delta-sigma modulation, In: IEEE MTT-S International Microwave Symposium 2011 1 4

3. A. Wentzel C. Meliani G. Fischer W. Heinrich An 8 W Gan-based H-bridge class-D PA for the 900 MHz band enabling ternary coding 1 3

4. Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements;Elsherif;Thin Solid Films,2012

5. A switch controlled dual-band band pass ΔΣ modulator;Park;Microwave Opt Technol Lett,2012

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