An investigation of band profile around the grain boundary of Cu(InGa)Se2 solar cell material by scanning probe microscopy-Reference-Cited by-同舟云学术

An investigation of band profile around the grain boundary of Cu(InGa)Se2 solar cell material by scanning probe microscopy

Published:2011-11-16 Issue:4 Volume:21 Page:595-599
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Takihara Masaki¹,Minemoto Takashi²,Wakisaka Youichi²,Takahashi Takuji¹

Affiliation:

1. Institute of Industrial Science; The University of Tokyo; 4-6-1, Komaba, Meguro-ku Tokyo 153-8505 Japan

2. Department of Photonics; Ritsumeikan University; 1-1-1 Noji Higashi Kusatsu Siga 525-8577 Japan

Funder

Grant-in-Aid for Scientific Research

Ministry of Education, Culture, Sports, Science, and Technology, Japan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.1235/fullpdf

Reference24 articles.

1. Solar cell efficiency tables (version 36);Green;Progress in Photovoltaics: Research and Applications,2010

2. Grain boundaries in Cu(In,Ga)(Se,S)2 thin-film solar cells;Rau;Applied Physics A: Materials Science & Processing,2009

3. Anomalous grain boundary physics in polycrystalline CuInSe2: the existence of a hole barrier;Persson;Physical Review Letters,2003

4. Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrier;Persson;Applied Physics Letters,2005

5. Numerical simulation of grain boundary effects in Cu(In,Ga)Se2 thin-film solar cells;Taretto;Thin Solid Films,2005

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