Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrier-Reference-Cited by-同舟云学术

Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrier

Published:2005-11-21 Issue:21 Volume:87 Page:211904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Persson Clas,Zunger Alex

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2132537

Reference17 articles.

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4. Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin films

5. S. Schuler, S. Nishiwaki, J. Beckmann, N. Rega, S. Brehme, S. Siebentritt, and M. Ch. Lux-Steiner, Proceedings of the 29th IEEE Photovoltaic Spec. Conf., New Orleans (2002), p. 504.

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