Recombination and Charge Collection at Nickel Silicide Precipitates in Silicon Studied by Electron Beam‐Induced Current-Reference-Cited by-同舟云学术

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Recombination and Charge Collection at Nickel Silicide Precipitates in Silicon Studied by Electron Beam‐Induced Current

Published:2021-10 Issue:10 Volume:258 Page:2170048
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Saring Philipp¹,Seibt Michael¹^ORCID

Affiliation:

1. IV. Physical Institute – Solids and Nanostructures University of Goettingen Friedrich-Hund-Platz 1 Göttingen D-37077 Germany

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202170048

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Accumalations of impurity Ni atoms and their effect on the electrophysical properties of Si;E3S Web of Conferences;2023

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