Dielectric Relaxation and Charge Transfer in Amorphous MoS 2 Thin Films-Reference-Cited by-同舟云学术

Dielectric Relaxation and Charge Transfer in Amorphous MoS 2 Thin Films

Published:2020-09-13 Issue:11 Volume:257 Page:2000114
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Kononov Aleksei A.¹^ORCID,Castro Rene A.¹,Glavnaya Diana D.¹,Anisimova Nadezhda I.¹,Bordovsky Gennady A.¹,Kolobov Alexander V.¹,Saito Yuta²,Fons Paul²

Affiliation:

1. Department of Physical Electronics Herzen State Pedagogical University of Russia 48, Moika Emb. St. Petersburg 191186 Russia

2. Device Technology Research Institute National Institute of Advanced Industrial Science & Technology Tsukuba Central 5, 1-1-1 Higashi Tsukuba 305-8565 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202000114

Reference16 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Spin and pseudospins in layered transition metal dichalcogenides

3. Control of valley polarization in monolayer MoS2 by optical helicity

4. Two-Dimensional Transition-Metal Dichalcogenides

5. Single-layer MoS2 transistors

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