Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer

Abstract

The spectra of dielectric relaxation of macroporous silicon with a mesoporous skin layer in the frequency range 1–106 Hz during cooling (up to 293–173 K) and heating (293–333 K) are presented. Macroporous silicon (pore diameter ≈ 2.2–2.7 μm) with a meso-macroporous skin layer was obtained by the method of electrochemical anodic dissolution of monocrystalline silicon in a Unno-Imai cell. A mesoporous skin layer with a thickness of about 100–200 nm in the form of cone-shaped nanostructures with pore diameters near 13–25 nm and sizes of skeletal part about 35–40 nm by ion-electron microscopy was observed. The temperature dependence of the relaxation of the most probable relaxation time is characterized by two linear sections with different slope values; the change in the slope character is observed at T ≈ 250 K. The features of the distribution of relaxation times in meso-macroporous silicon at temperatures of 223, 273, and 293 K are revealed. The Havriliak-Negami approach was used for approximation of the relaxation curves ε″ = f(ν). The existence of a symmetric distribution of relaxers for all temperatures was found (Cole-Cole model). A discussion of results is provided, taking into account the structure of the studied object.