Studies on Schottky Barrier Diodes Fabricated using Single‐Crystal Wafers of β‐Ga 2 O 3 Grown by the Optical Floating Zone Technique-Reference-Cited by-同舟云学术

Studies on Schottky Barrier Diodes Fabricated using Single‐Crystal Wafers of β‐Ga 2 O 3 Grown by the Optical Floating Zone Technique

Published:2021-10-13 Issue: Volume: Page:2100496
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Dhanabalan Dhandapani¹,Ananthu Vijayan¹,Akshita Kaza Venkata¹,Bhattacharya Sudipto²,Varadarajan Elangovan²,Ganesamoorthy Sarveswaran³⁴,Moorthy Babu Sridharan¹^ORCID,Natarajan Venkatachalam²,Verma Sudeep⁵,Srivatsava Meenakshi⁵,Lourdudoss Sebastian⁶

Affiliation:

1. Crystal Growth Centre Anna University Chennai 600025 India

2. RIC-IITM DRDO Chennai 600113 India

3. Materials Science Group Indira Gandhi Centre for Atomic Research Kalpakkam 603102 India

4. Department of Atomic Energy Homi Bhabha National Institute Mumbai 400 094 India

5. SSPL Lucknow Road, Timarpur Delhi 110 054 India

6. Department of Applied Physics KTH-Royal Institute of Technology Stockholm SE-100 44 Sweden

Funder

Defence Research and Development Organisation

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100496

Reference28 articles.

1. Growth and characterization of new transparent conductive oxides single crystals β-Ga2O3: Sn

2. Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal

3. Large-size β-Ga2O3 single crystals and wafers

4. Raman and photoluminescence properties of un-/ion-doped β-Ga2O3 single-crystals prepared by edge-defined film-fed growth method

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