Cross-sectional transmission electron microscopy of silicon LSI circuits and josephson junction devices-Reference-Cited by-同舟云学术

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Cross-sectional transmission electron microscopy of silicon LSI circuits and josephson junction devices

Published:1987-12 Issue:4 Volume:7 Page:319-322
ISSN:0741-0581
Container-title:Journal of Electron Microscopy Technique
language:en
Short-container-title:J. Elec. Microsc. Tech.

Author:

Du A. Y.,Chu Y. M.

Publisher

Wiley

Subject

Anatomy

Reference5 articles.

1. Cross‐sectional specimens for transmission electron microscopy

2. The preparation of cross-section specimens for transmission electron microscopy

3. and (1983) Transmission electron microscopy of silicon VLSI circuits and structures. New York: Wiley,

4. Inst. Phys. C;Pettit,1971

5. Transmission electron microscopy of cross sections of large scale integrated circuits

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Streamlined Technique for Preparation of Transverse Specimens for Transmission Electron Microscopy;MRS Proceedings;1990

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