Recombination Processes in Short-Period GaAsAlAs Superlattices of Type II
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlattices
2. X‐point excitons in AlAs/GaAs superlattices
3. Optical properties and band structure of short-period GaAs/AlAs superlattices
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1. Spin dynamics and magnetic field induced polarization of excitons in ultrathin GaAs/AlAs quantum wells with indirect band gap and type-II band alignment;Physical Review B;2017-07-10
2. Dynamics of exciton recombination in strong magnetic fields in ultrathin GaAs/AlAs quantum wells with indirect band gap and type-II band alignment;Physical Review B;2016-07-08
3. Periodic Behavior of the Exciton Oscillator Strength with AlAs Thickness in Type II GaAs AlAs Heterostructures;Acta Physica Polonica A;2001-09
4. Indirect barrier electron-hole gas transitions in mixed type-I–type-II GaAs/AlAs multiple quantum wells;Physical Review B;2001-06-21
5. Indirect transitions between barrier (X) electrons and two-dimensional hole gas in mixed type I - type II quantum wells;Springer Proceedings in Physics;2001
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