Photoionization of the Si-DX Center in AIGaAs: The Effects of Pressure and Local Configuration-Reference-Cited by-同舟云学术

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Photoionization of the Si-DX Center in AIGaAs: The Effects of Pressure and Local Configuration

Published:1996-11-01 Issue:1 Volume:198 Page:205-210
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Piotrzkowski R.,Litwin-Staszewska E.,Przybytek J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys

2. Energetics ofDX-center formation in GaAs andAlxGa1−xAs alloys

3. Defect Metastability in III-V Compounds

4. in: Defects in Semiconductors Vol. 15, Ed. Trans. Tech. Publ., Switzerland, 1989 (p. 1079).

5. , and , Defects in Semiconductors, (p. 1109).

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New type of persistent photoconductivity related to DX-center: the study of interband PPC in Si-doped AlGaAs;Physica B: Condensed Matter;1999-12

2. Photo-ionization spectra for alloy-induced configurations of Si–DX center in AlGaAs;Physica B: Condensed Matter;1999-12

3. Photoionization cross-section of the DX center in Te-doped AlxGa1−xSb;Journal of Applied Physics;1998-01

4. Photoionization of Ge¯-DX State in GaAs;Acta Physica Polonica A;1997-11

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