Composition dependence of nitrogen and tellurium bound state energies in In1−xGaxP
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Identification of recombination luminescence transitions in N-doped GaAs1−xPx (x = 0.87)
2. Evidence for Radiative Recombination inGaAs1−x Px:N(0.28≲x≲0.45) Involving an Isolated Nitrogen Impurity State Associated with theΓ1Minimum
3. Effect of composition and pressure on the nitrogen isoelectronic trap inGaAs1−xPx
4. Theory of bound states induced by disorder and isoelectronic potentials: Ga(As,P):N
5. Investigations of growth defects in solution-grown GaxIn1−xP with a SEM operating in the cathodoluminescence mode
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of Local Environment on Bound Excitons and Bound Excitonic Mqlecules in III-V Alloys. II. Numerical Results for GaxIn1−xP:N and the Role of Disorder Topology for the Optical Spectrum;physica status solidi (b);1985-12-01
2. Ga(x)In(1-x)P, further properties;Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties
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