The Influence of Compensation on the Hall Effect and Magnetoresistance of n-Hg0.8Cd0.2Te-Reference-Cited by-同舟云学术

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The Influence of Compensation on the Hall Effect and Magnetoresistance of n-Hg0.8Cd0.2Te

Published:1988-07-01 Issue:1 Volume:148 Page:197-204
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Tsidilkovskii I. M.,Arapov Yu. G.,Zvereva M. L.,Brandt N. B.,Kulbachinskii V. A.,Gorbatyuk I. N.,Elizarov A. I.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. , and , Proc. 18 th Intern. Conf. Phys. Semicond., Stockholm 1986 (p. 1205).

2. Magnetic-field induced metal-insulator transition in InSb and Hg0.79Cd0.21Te at very low temperatures

3. Anomalous Hall Effect below the Magnetic-Field-Induced Metal-Insulator Transition in Narrow-Gap Semiconductors

4. Magnetic-field-induced localization in InSb andHg0.79Cd0.21Te

5. Electron correlation effects on the magnetic-field-induced metal-insulator transition inHg0.79Cd0.21Te

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mobility Spectrum Analysis of the Electrical Conduction;Acta Physica Polonica A;1991-12

2. Magnetic-Field-Induced Localization of Electrons in Fluctuation Potential Wells of Impurities;physica status solidi (b);1990-01-01

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