Magnetic-field-induced localization in InSb andHg0.79Cd0.21Te
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.6952/fulltext
Reference12 articles.
1. Magnetic-Field-Induced Localization Transition in HgCdTe
2. Electron correlation effects on the magnetic-field-induced metal-insulator transition inHg0.79Cd0.21Te
3. Galvanomagnetic Properties of n-Type InSb at Low Temperatures. I. Localization of Carriers and Metallic Impurity Conduction under Zero and Weak Magnetic Fields
4. Galvanomagnetic Properties of n-Type InSb at Low Temperatures II. Magnetic Field-Induced Metal-Nonmetal Transition
5. Galvanomagnetic Properties of n-Type InSb at Low Temperatures. III. Transport in the Band Tailing and Hopping between Donors in the Magnetic Freeze-Out Regime
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