The Influence of the Variation of the Chemical Composition and of the Nitrogen Doping Level on the Energy Spectra of the Bound Excitons in GaAs1−xPx:N
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. and , Light-Emitting Diodes, Clarendon Press, Oxford 1976.
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3. Local-environment effect on the nitrogen bound state inGaPxAs1−xalloys: Experiments and coherent-potential approximation theory
4. Spontaneous and stimulated photoluminescence on nitrogen A‐line and NN‐pair line transitions in GaAs1−x Px : N
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Radiative recombination in ZnN-doped GaAs1−xPx: N mixed crystals;Physica Status Solidi (a);1987-01-16
2. The Influence of the Energy Spectrum of the Nitrogen Bound Exciton on the Efficiency in GaAs1−xPx:N;physica status solidi (a);1986-08-16
3. The influence of coulomb screening and of NNi-pairs on the recombination of bound excitons in GaAs1−xPx:N mixed crystals;physica status solidi (a);1985-02-16
4. Investigation of the Recombination Mechanism in GaAS0.11P0.89: N;Physica Status Solidi (a);1984-02-16
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