Radiative recombination in ZnN-doped GaAs1−xPx: N mixed crystals
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Optical investigations of the undulation spectrum of GaP:N:Zn
2. Undulation Spectra of GaP Associated with the Isoelectronic Trap N
3. Model calculations for radiative recombination in Zn-N-doppedGaAs1−xPxin the direct and indirect composition region
4. The Influence of the Doping Level on the Cathodoluminescence in GaAs1−xPx: N, Zn Epitaxial Layers
5. The influence of coulomb screening and of NNi-pairs on the recombination of bound excitons in GaAs1−xPx:N mixed crystals
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