Extended-Hückel-Theory Calculations for the Positive Divacancy in Silicon
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
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1. Defect-molecule parameters for the divacancy in silicon;Solid State Communications;1985-03
2. Electronic structure of the multivacancies in Si;Superlattices and Microstructures;1985-01
3. Electronic structure of the divacancy in silicon;Journal of Physics C: Solid State Physics;1983-04-30
4. Multivacancies, interstitials, and self-interstitial migration in silicon;Physica B+C;1983-02
5. The neutral divacancy in silicon;Solid State Communications;1982-07
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