Multivacancies, interstitials, and self-interstitial migration in silicon-Reference-Cited by-同舟云学术

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Multivacancies, interstitials, and self-interstitial migration in silicon

Published:1983-02 Issue:1-3 Volume:116 Page:18-27
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Pantelides S.T.,Ivanov I.,Scheffler M.,Vigneron J.P.

Publisher

Elsevier BV

Subject

General Engineering

Reference42 articles.

1. Conf. Ser. No. 46,1979

2. Conf. Ser. No. 59,1981

3. Point Defects in Solids,1975

4. Wave Functions for Impurity Levels

5. Theory of Scattering in Solids

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1. Defect dynamics in the presence of excess energetic carriers and high electric fields in wide-gap semiconductors;Journal of Applied Physics;2024-05-16

2. Nonequilibrium point defects and diffusion in silicon;Materials Science and Engineering: R: Reports;1994-10-15

3. Self-interstitial complexes in silicon;Radiation Effects and Defects in Solids;1994-06

4. Silicon self-interstitial migration paths and barrier energies by the critical-path method;Journal of Physics: Condensed Matter;1993-08-30

5. Oxygen-induced broken-bond defect in silicon;Physical Review B;1992-02-15

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