Relaxation and Recombination of Photoexcited Carriers in a-Si: H Calculated by Monte-Carlo Simulations-Reference-Cited by-同舟云学术

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Relaxation and Recombination of Photoexcited Carriers in a-Si: H Calculated by Monte-Carlo Simulations

Published:1992-03-01 Issue:1 Volume:170 Page:339-351
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Gutschker O.,Bindemann R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Thesis, Universität Marburg, Fachbereich Physik ( 1990).

2. Geminate recombination in a-Si:H

3. Luminescence and recombination in hydrogenated amorphous silicon

4. Photoluminescence in hydrogenated amorphous silicon

5. Electronic transport and recombination in amorphous semiconductors at low temperatures

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence mechanism in hydrogenated amorphous silicon studied by frequency-resolved spectroscopy;Physical Review B;1995-12-15

2. Enhanced non-radiative recombination in hydrogenated amorphous silicon at low carrier densities and low temperatures;Philosophical Magazine Letters;1993-04

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