The Temperature Dependence and Dynamical Properties of the Bond Charge in GaAs and InSb-Reference-Cited by-同舟云学术

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The Temperature Dependence and Dynamical Properties of the Bond Charge in GaAs and InSb

Published:1981-03-01 Issue:1 Volume:104 Page:253-260
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Pietsch U.,Unger K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Thesis, Purdue University, West Lafayette, 1975.

2. X-ray determination of valence-electron charge density and its temperature dependence in indium antimonide

3. Experimental Investigations of Bonding Charges in Diamond and Zinc Blende Structures

4. Relativistic Calculation of Anomalous Scattering Factors for X Rays

5. Internat. Tables of X-Ray Crystals, Vol. IV, The Kynoch Press, Birmingham 1974.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Dynamical Bond Charge Transfer in GaAs by Changing X-Ray Reflection Power under High Electric Field;physica status solidi (b);1985-09-01

2. Simulation fo Dynamical Bond Charge Transfer Properties in Elemental Semiconductors by Means of a Simple Quantum-Mechanical Model;physica status solidi (b);1984-12-01

3. Investigation of the bond charge in GaP with X-ray data;Physica Status Solidi (a);1981-12-16

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