Simulation fo Dynamical Bond Charge Transfer Properties in Elemental Semiconductors by Means of a Simple Quantum-Mechanical Model
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference34 articles.
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1. Static and Dynamical Valence-Charge-Density Properties of GaAs;Zeitschrift für Naturforschung A;1993-02-01
2. The Advantage of Internal Force Calculations in the X-Ray Crystal Structure Analysis;physica status solidi (b);1988-06-01
3. An Experimental Proof of the Valence Electron Density Variation in Silicon under High Electric Field;physica status solidi (b);1987-10-01
4. X-Ray Electron Charge Density Distribution in Silicon;physica status solidi (b);1986-10-01
5. Quantum-chemical Approach to the Dependence of Oxygen Charge on Bond Angle in SiO2;Crystal Research and Technology;1986-03
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