Ti Deep-Level Delta-Doping in GaAs Schottky Diodes: Capacitance–Voltage Analysis-Reference-Cited by-同舟云学术

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Ti Deep-Level Delta-Doping in GaAs Schottky Diodes: Capacitance–Voltage Analysis

Published:1992-10-01 Issue:2 Volume:173 Page:661-670
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Piprek J.,Krispin P.,Kostial H.,Lange C. H.,Böer K. W.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Statistics of the Recombinations of Holes and Electrons

2. Electron-Hole Recombination in Germanium

3. , , , and , J. appl. Phys. (1992). to be published.

4. Deep Ti donor in GaAs

5. Electronic and optical properties of Ti‐doped GaAs and InP; semi‐insulating InP

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1. Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance–voltage measurements;Journal of Applied Physics;2000

2. Deep and shallow electronic states at ultrathin InAs insertions in GaAs investigated by capacitance spectroscopy;Journal of Applied Physics;1998-12

3. Deep-level planar doping of titanium in GaAs;physica status solidi (b);1996-03-01

4. Inverse delta doping for improvement of solar cells;Journal of Applied Physics;1994-05-15

5. Donor-acceptor pairs to limit Voc-improvement of photo-diodes;Solar Energy Materials and Solar Cells;1994-04

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