Deep Ti donor in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103470
Reference18 articles.
1. New semi‐insulating InP: Titanium midgap donors
2. Transition metals in silicon
3. Growth of double doped semi-insulating indium phosphide single crystals
4. Transition-metal impurities in semiconductors and heterojunction band lineups
5. Deep-Level Impurities: A Possible Guide to Prediction of Band-Edge Discontinuities in Semiconductor Heterojunctions
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1. Effects of irradiation and annealing on deep levels in rhodium-doped p-GaAs grown by metal-organic chemical-vapor deposition;Journal of Applied Physics;2011-06
2. Deep levels in Ti-doped GaAs epilayers grown on undoped GaAs (100) substrates;Applied Surface Science;1999-07
3. The dependence of the optical properties on the Ti doping concentration in GaAs epilayers;Applied Surface Science;1999-06
4. Effects of uniaxial stress on the absorption lines of and the nature of the Jahn-Teller coupling;Journal of Physics: Condensed Matter;1998-04-20
5. Single-level interface states in semiconductor structures investigated by admittance spectroscopy;Applied Physics Letters;1997-03-17
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