Asphericity and temperature dependence of the bond charge in silicon
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. X-Ray Determination of Bond Charges in Silicon
2. Temperature Dependence of Bond charge Vibration in Silicon
3. and , Proc. Lnternat. Conf. Phys. Semicond., Edinbourgh 1978.
4. Diffraction studies of the (222) reflection in Ge and Si: Anharmonicity and the bonding electron
5. Temperature and pressure dependence of the Si(222) forbidden reflection and the vibration of the bonding charge
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of Dynamical Bond Charge Transfer in GaAs by Changing X-Ray Reflection Power under High Electric Field;physica status solidi (b);1985-09-01
2. Simulation fo Dynamical Bond Charge Transfer Properties in Elemental Semiconductors by Means of a Simple Quantum-Mechanical Model;physica status solidi (b);1984-12-01
3. Hydrostatic Pressure and Uniaxial Stress Dependence of the Silicon (222) X-Ray Reflection Power;physica status solidi (b);1983-11-01
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