Energy distribution measurements of 300 keV transmitted protons at the axial-to-planar channeling transition in silicon
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Transparency oscillations of a silicon single crystal in passing from axial to planar channelling
2. Axial- to Planar-Channeling Transition
3. Resonance Dechanneling of Hydrogen and Helium Ions with Hundreds of keV Energies in the 〈110〉-(110) Axial-to-Planar Transitions in Silicon
4. Analytical Description of the Resonance Dechanneling Effect in the Case of Axial-To-Planar Channeling Transition
5. , and , Proc. All-Union Conf. Physics of Interaction of Charged Particles with Single Crystals, Moscow 1982 (p. 44) (in Russian).
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Resonance dechanneling in strained-layer superlattices in the case of axial-to-planar channeling transition;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-04
2. Measurements of Proton Channeling Energy Losses in Silicon in the Intermediate Energy Region;physica status solidi (b);1985-10-01
3. Measurements of the Ionic Charge of Hydrogen and Helium Ions Moving through Silicon by Means of the Resonance Dechanneling Effect;physica status solidi (b);1983-12-01
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