Resonance Dechanneling of Hydrogen and Helium Ions with Hundreds of keV Energies in the 〈110〉-(110) Axial-to-Planar Transitions in Silicon
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Transparency oscillations of a silicon single crystal in passing from axial to planar channelling
2. The resonant dechanneling determination of the natural oscillation period for ions in planar channels
3. Resonance dechanneling of fast protons in axis-to-plane transitions in silicon
4. Theory of Resonance Dechannelling
5. Analytical Description of the Resonance Dechanneling Effect in the Case of Axial-To-Planar Channeling Transition
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Computer simulation of channeling in strained-layer superlattices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-04
2. Measurements of the Ionic Charge of Hydrogen and Helium Ions Moving through Silicon by Means of the Resonance Dechanneling Effect;physica status solidi (b);1983-12-01
3. Nonlinear Effect of Particle Motion under Axial-to-Planar Channeling Transition Conditions;physica status solidi (b);1983-12-01
4. Energy distribution measurements of 300 keV transmitted protons at the axial-to-planar channeling transition in silicon;physica status solidi (b);1983-03-01
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