On the problem of an intermediate order in amorphous semiconductors-Reference-Cited by-同舟云学术

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On the problem of an intermediate order in amorphous semiconductors

Published:1983-10-01 Issue:2 Volume:119 Page:515-524
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Iskra V. D.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Intermediate range order in amorphous solids

2. and , Physikalisch-Technische Bundesanstalt, Preprint 1980.

3. Electroreflectance and Raman scattering investigation of glow-discharge amorphous Si:F:H

4. and , Statisticheskaya fizika, Izd. Nauka, Moscow 1964.

5. , , , , and , Electronnaya teoriya neuporiadochennikh poluprovodnikov, Izd. Nauka, Moscow 1981.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The question of the intermediate order in?-Si?H;Soviet Physics Journal;1985-07

2. Amorphous silicon bibliography 1983 update introduction;Solar Cells;1985-02

3. Calculation of Some Characteristics of an Intrinsic Random Field in Hydrogenated Amorphous Silicon;physica status solidi (b);1984-11-01

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