Calculation of Some Characteristics of an Intrinsic Random Field in Hydrogenated Amorphous Silicon-Reference-Cited by-同舟云学术

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Calculation of Some Characteristics of an Intrinsic Random Field in Hydrogenated Amorphous Silicon

Published:1984-11-01 Issue:1 Volume:126 Page:253-260
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Khamidullina N. M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. , , , , and , Electronnaya teoriya neuporyadochennykh poluprovodnikov. Izd. Nauka, Moscow 1981.

2. Teoriya rasseyaniya rentgenovskikh luchey i teplovykh neitronov realnimy kristallamy, Izd. Nauka, Moscow 1967.

3. and , Statisticheskaya fizika, Part I, Izd. Nauka, Moscow 1970.

4. and , Electronic Processes in Non-Crystalline Materials, Clarendon Press, Oxford 1971.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current problems in the theory of disordered semiconductors;Journal of Structural Chemistry;1987

2. Calculation of certain statistical and kinetic characteristics of a?Si?H;Soviet Physics Journal;1985-09

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