Zero-Phonon versus Classical Absorption Thresholds Due to Photoexcitation Cross-Section Bands of the A Centre in GaAs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Optical transitions via the deep O donor in GaP. I. Phonon interaction in low-temperature spectra
2. Temperature dependences of the nonradiative multiphonon carrier capture and ejection properties of deep traps in semiconductors. I. Theoretical results
3. Novel Method for Detecting Thermal Trap Depths from Phonon-Broadened Photoneutralization Cross Section Bands
4. Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
5. Photoionisation and phonon coupling
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1. Alternative electronic parts for multiphonon-broadened photoionization cross sections of deep levels in SiC;Journal of Applied Physics;2005-06
2. Correlation of electrical and optical properties of the vanadium-related C level in silicon;Physical Review B;1997-02-15
3. Franck - Condon shift and temperature dependence of the zero-phonon binding energy of the deep selenium centre in silicon;Semiconductor Science and Technology;1996-10-01
4. Alternative Way for Detecting Franck-Condon Shifts from Thermally Broadened Photoneutralization Cross-Section Bands of Deep Traps in Semiconductors;physica status solidi (b);1994-12-01
5. Practicable Method for Estimating Thermal Depths from Phonon-Broadened Photoexcitation Cross-Section Bands. III. Generalization for Charged Centres;physica status solidi (b);1993-09-01
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