Alternative Way for Detecting Franck-Condon Shifts from Thermally Broadened Photoneutralization Cross-Section Bands of Deep Traps in Semiconductors
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Secondary electron doping contrast: Theory based on scanning electron microscope and Kelvin probe force microscopy measurements;Journal of Applied Physics;2010-01
2. Alternative electronic parts for multiphonon-broadened photoionization cross sections of deep levels in SiC;Journal of Applied Physics;2005-06
3. Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors;Journal of Applied Physics;2004-07
4. Correlation of electrical and optical properties of the vanadium-related C level in silicon;Physical Review B;1997-02-15
5. Temperature dependence of optical properties of the deep sulfur center in silicon;Journal of Applied Physics;1996-11
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