Dominant Traps in Liquid Phase Epitaxial GaAs Studied by Controlled Doping with Indium and Antimony
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Deep‐level distributions near p‐n junctions in LPE GaAs
2. Majority-carrier traps in n- and p-type epitaxial GaAs
3. Electronic properties of native deep-level defects in liquid-phase epitaxial GaAs
4. , and , Proc. Inst. Phys. Conf. Ser. No. 33b, 155 (1977).
5. Deep levels and growth conditions of LPE GaAs crystals
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