Stable Configuration of an Interstitial Atom with Relaxation Effect in Si and Ge-Reference-Cited by-同舟云学术

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Stable Configuration of an Interstitial Atom with Relaxation Effect in Si and Ge

Published:1988-10-01 Issue:2 Volume:149 Page:477-482
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Soma T.,Atarashi N.,Kagaya H.-Matsuo

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Formation and Migration Energies of an Interstitial Atom in Si and Ge

2. Modified Perturbation Method for Diamond-Type Crystals

3. Local Heine-abarenkov model potential for covalent crystals

4. Properties of the Interstitial in the Diamond-Type Lattice

5. New method for the relaxation effect around point defects

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interstitial Atom in the Zincblende-Type Lattice;physica status solidi (b);1990-02-01

2. Germanium (Ge), solubility and segregation data of impurities: groups I–VIIIA;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements

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