Formation and Migration Energies of an Interstitial Atom in Si and Ge-Reference-Cited by-同舟云学术

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Formation and Migration Energies of an Interstitial Atom in Si and Ge

Published:1986-07-01 Issue:1 Volume:136 Page:85-90
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Soma T.,Matsuoka T.,Kagaya H.-Matsuo

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Lattice Defects in Semiconductors, Ed. Institute of Physics, Bristol 1975.

2. , and , Diffusion in Solids, Ed. and , Academic Press, Inc., New York 1984.

3. A Theory of Migration Energies of an Interstitial in Germanium and Silicon

4. Properties of the Interstitial in the Diamond-Type Lattice

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Factors determining the saturation of point defects in growing silicon crystals;Journal of Crystal Growth;1999-06

2. Interstitial Atom in the Zincblende-Type Lattice;physica status solidi (b);1990-02-01

3. Stable Configuration of an Interstitial Atom with Relaxation Effect in Si and Ge;physica status solidi (b);1988-10-01

4. Germanium (Ge), solubility and segregation data of impurities: groups I–VIIIA;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements

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