Properties of a high-mobility two-dimensional electron gas in modulation-doped quantum well structures of GaInAs/AIInAs and GaInAs/(Ga1−xAlx)InAs heterostructures
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
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4. Extremely High 2DEG Concentration in Selectively Doped In0.53Ga0.47As/N-In0.52Al0.48As Heterostructures Grown by MBE
5. Growth and characterization of AlGaInAs lattice matched to InP grown by molecular‐beam epitaxy
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1. Characteristics of Gated GaAs/Al0.3Ga0.7As Heterostructures;physica status solidi (a);2001-10
2. Commensurability oscillations on lateral surface superlattices with large periods;Thin Solid Films;2001-09
3. Correlation of buffer strain relaxation modes with transport properties of two‐dimensional electron gases;Journal of Applied Physics;1996-12-15
4. Persistent photoconductivity and properties of the Two-Dimensional electron Gas in modulation-doped GaInAs/AlInAs heterostructures after illumination;physica status solidi (b);1996-08-01
5. Modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterostructures grown on GaAs substrates using step-graded InxGa1−xAs buffers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07
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