On the Theory of Optical Absorption Spectra of Disordered Semiconductors-Reference-Cited by-同舟云学术

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On the Theory of Optical Absorption Spectra of Disordered Semiconductors

Published:1972-05-01 Issue:1 Volume:51 Page:241-250
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:en
Short-container-title:Phys. Stat. Sol. (b)

Author:

Burtsev E. V.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Proc. IXth Internat. Conf. Semiconductor Phys., Vol. 1, Nauka, Leningrad 1968 (p. 160).

2. The Electronic Theory of Heavily Doped Semiconductors, Elsevier Publ. Co., New York 1966.

3. Interband optical transitions in disordered semiconductors

4. MODULATION OF OPTICAL ABSORPTION AT THE INTRINSIC EDGE BY ACOUSTOELECTRIC DOMAINS INn‐GaAs

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1. Auger Recombination in an Intense Acoustic Noise Field;physica status solidi (b);1997-03

2. Auger Recombination in an Intense Piezoelectric Noise Field;Journal of the Physical Society of Japan;1990-09-15

3. Auger Recombination in Disordered Semiconductors. Effect of the Band-Gap Fluctuation;physica status solidi (b);1990-01-01

4. Theoretical studies of optical absorption in amorphous semiconductors;Journal of Physics C: Solid State Physics;1987-01-10

5. On the theory of electroabsorption in amorphous semiconductors;Czechoslovak Journal of Physics;1982-01

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