MODULATION OF OPTICAL ABSORPTION AT THE INTRINSIC EDGE BY ACOUSTOELECTRIC DOMAINS INn‐GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1651917
Reference19 articles.
1. Oscillatory Current Behavior in GaSb and Its Relation to Spontaneous Generation and Amplification of Ultrasonic Flux
2. Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV
3. Absorption Edge of Impure Gallium Arsenide
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1. Auger Recombination in an Intense Piezoelectric Noise Field;Journal of the Physical Society of Japan;1990-09-15
2. Acoustoelectric domain induced transparency in tellurium at 11 μm;Applied Optics;1977-11-01
3. Mechanism of optical modulation caused by acoustic domains in CdS;Physica Status Solidi (a);1977-07-16
4. Injection of Acoustic Domains into Semiconductors;Japanese Journal of Applied Physics;1977-05
5. Effect of Screening of Piezoelectric Phonon Fields on Absorption-Edge Broadening in GaAs;Physical Review Letters;1976-11-22
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