On the temperature dependence of InGaAsP semiconductor lasers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Band-to-band Auger recombination effect on InGaAsP laser threshold
2. Evidence of the importance of Auger recombination for InGaAsP lasers
3. The case for Auger recombination in In1−xGaxAsyP1−y
4. Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources
5. Theory of the temperature dependence of the threshold current of an InGaAsP laser
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