Evidence of the importance of Auger recombination for InGaAsP lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19840059?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Horikoshi, Y.: ‘Temperature dependence of laser threshold current’, Pearsall, T.P., GaInAsP alloy semiconductors, (John Wiley & Sons 1982), p. 379–412
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