On the Infrared-Plasma-Reflection in p-Type GaAs-Reference-Cited by-同舟云学术

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On the Infrared-Plasma-Reflection in p-Type GaAs

Published:1973-01-01 Issue:1 Volume:55 Page:K69-K74
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:de
Short-container-title:Phys. Stat. Sol. (b)

Author:

Rheinländer B.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Determination of Optical Constants and Carrier Effective Mass of Semiconductors

2. Physics of III-V Compounds, Wiley, New York 1964 (p. 87).

3. Measurement of the Conductivity Effective Mass in Semiconductors Using Infrared Reflection

4. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. References;Thin Films by Chemical Vapour Deposition;1990

2. Infrared plasma reflection in p-type GaAs;Solid-State Electronics;1978-04

3. Characterization of Heteroepitaxial Thin-Film Semiconductors on Insulating Substrates;Heteroepitaxial Semiconductors for Electronic Devices;1978

4. On the infrared reflection due to the plasmon-phonon interaction in p-type GaAs;physica status solidi (b);1975-03-01

5. Mobility of holes of zinc-blende III–V and II–VI compounds;Physica Status Solidi (a);1974-11-16

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