On the infrared reflection due to the plasmon-phonon interaction in p-type GaAs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Determination of Optical Constants and Carrier Effective Mass of Semiconductors
2. Measurement of the Conductivity Effective Mass in Semiconductors Using Infrared Reflection
3. On the Infrared-Plasma-Reflection in p-Type GaAs
4. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
5. Coupling of Plasmons to Polar Phonons in Degenerate Semiconductors
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The apparent effect of sample surface damage on the dielectric parameters of GaAs;Physica B: Condensed Matter;2007-12
2. The classical oscillator model and dielectric constants extracted from infrared reflectivity measurements;Infrared Physics & Technology;2007-07
3. References;Optical Characterization of Semiconductors;1993
4. Infrared reflectance studies of bulk and epitaxial‐filmn‐type GaAs;Journal of Applied Physics;1977-01
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