Electronic Properties of Vacancy-Induced Structures in AlAs/GaAs Superlattices
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Pseudopotential calculations for(GaAs)1-(AlAs)1and related monolayer heterostructures
2. Similarity of (Ga, Al, As) alloys and ultrathin heterostructures: Electronic properties from the empirical pseudopotential method
3. Many-electron excited states of O-in GaP
4. InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition
5. New method for calculating electronic properties of superlattices using complex band structures
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Native defects in a (GaP)1/(InP)1strained-layer superlattice: local electronic structure and diffusion mechanism;Journal of Physics: Condensed Matter;1992-02-03
2. Structural ability and electronic density of states in (001)- and (111)-oriented (GaP)1/(InP)1strained-layer superlattices;Journal of Physics: Condensed Matter;1991-09-09
3. Localized States Induced by Self-Interstitial Defects in Ultra-Thin GaP/InP Strained-Layer Superlattices;physica status solidi (b);1991-09-01
4. Effect of strain on the electronic structures of ultrathin layer GaP/InP (111) superlattice: Bulk and surface;Superlattices and Microstructures;1991-01
5. Self- and impurity-diffusion mechanisms in undoped and modulation-doped (GaAl) as superlattices;Chinese Physics Letters;1990-11
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