Effect of strain on the electronic structures of ultrathin layer GaP/InP (111) superlattice: Bulk and surface
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Strained‐layer superlattices from lattice mismatched materials
2. Misfit strains in semiconductor superlattices
3. Optical Properties of (100) - and (111)-Oriented GaInAs/GaAs Strained-Layer Superlattices
4. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
5. Electronic structure of the (GaP)1/(InP)1(111) strained-layer superlattice
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1. Some aspects of the physics of man-made semiconductor heterosystems: superlattice electronic structure and related topics;Surface Science Reports;1993-11
2. Strain relaxation induced by interfacial steps of GaAs/In0.2Ga0.8As superlattices;Superlattices and Microstructures;1993-04
3. A model for the buffer layer formed on silicon during HFCVD diamond growth;Physica B: Condensed Matter;1993-04
4. A model for the buffer layer formed on silicon during HFCVD diamond growth;Wide-Band-Gap Semiconductors;1993
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