ZnSe-Based MOVPE and MBE Grown LEDs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
2. Low temperature MOVPE growth of ZnSe with ditertiarybutylselenide
3. Low temperature growth and characterization of ZnSe films grown on GaAs
4. , , , , , and , to be published in J. Crystal Growth.
5. , , and , to be published in J. Crystal Growth.
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3. Ab initio molecular orbital characterization of sources for photo-assisted radical beam epitaxy of group-III nitrides;Computational Materials Science;2003-03
4. Ab initio molecular orbital characterization of some sources for laser-assisted radical beam epitaxy of group III nitrides;SPIE Proceedings;2003-02-21
5. Predictive use of ab initio MO methods in PDECB-based approach to low-temperature epitaxy of stoichiometric group-III nitrides;Materials Science in Semiconductor Processing;2003-02
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