Resistance Controllability in Alkynylgold(III) Complex-Based Resistive Memory for Flash-Type Storage Applications-Reference-Cited by-同舟云学术

Resistance Controllability in Alkynylgold(III) Complex-Based Resistive Memory for Flash-Type Storage Applications

Published:2017-06-01 Issue:14 Volume:12 Page:1790-1795
ISSN:1861-4728
Container-title:Chemistry - An Asian Journal
language:en
Short-container-title:Chem. Asian J.

Author:

Wang Peng¹,Fang Yu¹,Jiang Jun¹,Ji Yujin²,Li Youyong²,Zheng Junwei¹,Xu Qingfeng¹,Lu Jianmei¹

Affiliation:

1. College of Chemistry, Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science; and Technology; National Center for International Research; Soochow University; Suzhou 215123 P.R. China

2. Institute of Functional Nano&Soft Materials Laboratory (FUNSOM); Jiangsu Key Laboratory for Carbon-Based Functional Materials; Soochow University; Suzhou 215123 P.R. China

Funder

Chinese Natural Science Foundation

Jiangsu Province office of Education

Qinglan Project in Jiangsu Province

PAPD

Publisher

Wiley

Subject

General Chemistry,Biochemistry,Organic Chemistry

Reference43 articles.

1. Highlights on the recent advances in gold chemistry—a photophysical perspective

2. Gold—an introductory perspective