Switching the memory behaviour from binary to ternary by triggering S<sub>6</sub><sup>2−</sup> relaxation in polysulfide-bearing zinc–organic complex molecular memories-Reference-Cited by-同舟云学术

Switching the memory behaviour from binary to ternary by triggering S₆²⁻ relaxation in polysulfide-bearing zinc–organic complex molecular memories

Published:2023 Issue:7 Volume:10 Page:2535-2541
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Zhou Pan-Ke¹,Lin Xiao-Li¹,Chee Mun Yin²,Lew Wen Siang²,Zeng Tao³,Li Hao-Hong¹^ORCID,Chen Xiong¹^ORCID,Chen Zhi-Rong¹^ORCID,Zheng Hui-Dong⁴^ORCID

Affiliation:

1. Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China

2. School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore

3. Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore

4. Fujian Engineering Research Centre of Advanced Manufacturing Technology for Fine Chemicals, College of Chemical Engineering, Fuzhou University, Fuzhou, Fujian, 350108, China

Abstract

A new type of zinc-organic-based ternary memories have been implemented by regulating the conjugated degree of organic ligands and triggering the ring-to-chain relaxation of S62−, which paves a new way for the construction of multilevel memories.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Fujian Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/MH/D3MH00037K

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1. Memory leads the way to better computing

2. Embedding Azobenzol-Decorated Tetraphenylethylene into the Polymer Matrix to Implement a Ternary Memory Device with High Working Temperature/Humidity