12.29% Low Temperature–Processed Dopant‐Free CdS/p‐Si Heterojunction Solar Cells-Reference-Cited by-同舟云学术

12.29% Low Temperature–Processed Dopant‐Free CdS/p‐Si Heterojunction Solar Cells

Published:2019-05-22 Issue:12 Volume:6 Page:1900367
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Cai Lun¹^ORCID,Wang Wenxian²,Jin Lei³,Yao Zhirong¹,Lin Wenjie¹,Meng Lanxiang¹,Ai Bin¹,Liang Zongcun¹,Huang Yuelong²,Zhang Fuqin³,Altermatt Pietro P.⁴,Shen Hui¹^ORCID

Affiliation:

1. Institute for Solar Energy SystemsGuangdong Provincial Key Laboratory of Photovoltaic TechnologySchool of PhysicsSun Yat‐Sen University Guangzhou 510006 P. R. China

2. Institute of photovoltaicsSouthwest Petroleum University Chengdu 610500 P. R. China

3. Powder Metallurgy InstitutionCentral South University Changsha 410083 P. R. China

4. State Key Laboratory of PV Science and TechnologyTrina Solar Changzhou 213031 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.201900367

Reference62 articles.