Ambipolar Memristive Phenomenon in Large-Scale, Few-Layered αMoO3Recrystallized Films-Reference-Cited by-同舟云学术

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Ambipolar Memristive Phenomenon in Large-Scale, Few-Layered αMoO3Recrystallized Films

Published:2018-11-25 Issue:2 Volume:6 Page:1801591
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Kim Hyungsik¹^ORCID,Lee Gwan-Hyoung²,Hone James³,Shepard Kenneth L.¹

Affiliation:

1. Department of Electrical Engineering; Columbia University; New York NY 10027 USA

2. Department of Materials Science and Engineering; Yonsei University; Seoul 03722 South Korea

3. Department of Mechanical Engineering; Columbia University; New York NY 10027 USA

Funder

Semiconductor Research Corporation

Samsung Research Funding & Incubation Center of Samsung Electronics

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/admi.201801591/fullpdf

Reference40 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

3. Black phosphorus field-effect transistors

4. Silicene field-effect transistors operating at room temperature

5. Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide

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1. Thinner 2D α-MoO3 makes setting up memristors easier;Journal of Materiomics;2024-11

2. 基于二维α-MoO3 的多值存储特性及其双重导电机制研究;Science China Materials;2023-11-28

3. 2D Oxides for Electronics and Optoelectronics;Small Science;2022-06-22

4. Epitaxial growth of MoO₃ polymorphs and impacts of Li-ion electrochemical reactions on their structural and electronic properties;Applied Physics Express;2022-05-01

5. Building Functional Memories and Logic Circuits with 2D Boron Nitride;Advanced Functional Materials;2020-09-28

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