Doping Effects and Grain Boundaries in Thermal CVD Graphene on Recrystallized Cu Foil-Reference-Cited by-同舟云学术

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Doping Effects and Grain Boundaries in Thermal CVD Graphene on Recrystallized Cu Foil

Published:2016-06-06 Issue:16 Volume:3 Page:1600166
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Čermák Jan¹,Yamada Takatoshi²,Ganzerová Kristína¹,Rezek Bohuslav¹³

Affiliation:

1. Institute of Physics; ASCR; v.v.i, Cukrovarnická 10 16200 Prague Czech Republic

2. National Institute of Advanced Industrial Science and Technology (AIST); Central 5, 1-1-1 Higashi Tsukuba 3, 05-8565 Japan

3. Faculty of Electrical Engineering; Czech Technical University; Technická 2 166 27 Prague Czech Republic

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Reference48 articles.

1. Increasing the elastic modulus of graphene by controlled defect creation

2. Work Function Engineering of Graphene

3. Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage

4. Ageing mechanisms and reliability of graphene-based electrodes

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