Reliability of Nanoelectronic Devices
Author:
Affiliation:
1. Taiwan Semiconductor Manufacturing Co.; 121 Park Ave. 3, Science Based Industry Park 30844 Hsinchu Taiwan
2. Engineering Physics Division, National Institute of Standards and Technology (NIST); 100 Bureau Drive Gaithersburg MD 20899 USA
Publisher
Wiley-VCH Verlag GmbH & Co. KGaA
Reference40 articles.
1. Mistry , K. et al. 2007 IEDM Technical Digest
2. Jan , C.-H. et al. 2012 k IEDM Technical Digest 44 47
3. Nagaraj , S. et al. 2005 International Interconnect Technology Conference 71
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